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Aug 24th, 2010
New GaN transistor realizes long range communication using millimeter waves
The Semiconductor Company of Panasonic Corp developed a gallium nitride (GaN)-based transistor that has a high output of 10.7W in a millimeter waveband of 25GHz.
The transistor was formed on a silicon (Si) substrate, which can be easily mass-produced and is available in large diameters. The company claims that the transistor has more output power than any other GaN-based transistors in the industry.
Fig 1: The gallium nitride (GaN)-based transistor that has a high output of 10.7W in a millimeter waveband of 25GHz
This time, Panasonic prototyped a 25GHz transceiver whose modulation method is OFDM (orthogonal frequency division multiplexing) and achieved an average output power of 2W with an effective data transfer rate of 16Mbps. According to an estimate based on the gain of the transceiving antenna and transmission loss in the atmosphere, the transceiver is capable of long range communication of 84km, the company said.
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