Gain Microwave Inc., a leading developer of gallium nitride MMIC technology for wireless infrastructure, industrial and aerospace applications, introduces the GMW1601 high power GaN HFET RF switch, the first of five new GaN MMIC products to be introduced in the following weeks.

The GMW1601 is a high-power broadband GaN HFET SPDT RF switch, covering DC to 6 GHz and offers high isolation and low insertion loss. Using a high performance GaN process, the GMW1601 switch has the ability to operate in high temperatures and has an intrinsically high tolerance to harsh environments. This makes this RF switch ideal for industrial, military and aerospace applications.

The datasheet is available at www.gainmicrowave.com/public/rf_switches.php
Engineering units and evaluation boards are now available.

About Gain Microwave
Gain Microwave is a leading innovator in the development and application of gallium nitride (GaN) MMIC technology. Gain Microwave delivers the industry's most comprehensive GaN component solutions, from concept through to design, manufacture, test and supply of advanced components for RF power and robust RF applications, by combining an exceptional expertise in advanced III-V MMIC technology, design and test, with the backing of a world-class wafer fabrication facility.