Gain Microwave, a leading developer of gallium nitride (GaN) MMIC technology for wireless infrastructure, industrial and aerospace applications, introduces the GMW3051 high-power GaN negative impedance amplfier.

The GMW3051 is designed to be easily integrated with an external resonator for use as a Voltage Controlled Oscillator. Using a high performance gallium nitride process, the GMW3051 delivers good phase-noise performance and high rf output power, combined with the ability to operate in harsh environments, such as high temperature. This makes it ideal for military, aerospace and industrial applications.

About Gain Microwave
Gain Microwave is a leading innovator in the development and application of gallium nitride (GaN) MMIC technology. Gain Microwave delivers the industry's most comprehensive GaN component solutions, from concept through to design, manufacture, test and supply of advanced components for RF power and robust RF applications, by combining an exceptional expertise in advanced III-V MMIC technology, design and test, with the backing of a world-class wafer fabrication facility.