Silicon Carbide (SiC) power semiconductor supplier GeneSiC Semiconductor has announced the immediate availability of 8000V SiC PiN rectifiers; 8000V SiC Schottky rectifiers, 3300V SiC Schottky rectifiers and 6500V SiC thyristors in bare die format.
The products are the highest-voltage SiC devices on the market, GeneSiC claims, and are targeted specifically at oil and gas instrumentation, voltage multiplier circuits and high-voltage assemblies.
Contemporary ultra-high-voltage circuits suffer from low circuit efficiencies and large sizes because the reverse recovery currents from silicon rectifiers discharge the parallel connected capacitors, notes GeneSiC. At higher rectifier junction temperatures, this situation worsens further, since the reverse recovery current in silicon rectifiers increases with temperature. With thermally constrained high-voltage assemblies, junction temperatures rise quite easily even when modest currents are passed.
In contrast, high-voltage SiC rectifiers offer characteristics that could revolutionize high-voltage assemblies, reckons GeneSiC. The firm’s 8000V and 3300V Schottky rectifiers feature zero reverse recovery current that does not change with temperature. This relatively high voltage in a single device allows a reduction in voltage multiplication stages required in typical high-voltage generator circuits, through the use of higher AC input voltages. The near-ideal switching characteristics allow the elimination or dramatic reduction of voltage balancing networks and snubber circuits, says GeneSiC. The 8000V PiN rectifiers offer higher current levels and higher operating temperatures. The 6500V SiC thyristor chips are also available to accelerate R&D of new systems, adds the firm.
“The 8000V rating goes beyond what silicon devices can offer at rated temperatures,” says president Dr Ranbir Singh. “GeneSiC’s low-VF, low-capacitance SiC rectifiers and thyristors will enable system-level benefits not possible before,” he adds.