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Jul 4th, 2012
Hybrid Memory Cube architecture: a closer look
At the recent VLSI conference in Hawaii, Joe Jeddeloh of Micron revealed further details about the Micron Hybrid Memory Cube. I-Micronews felt it was worth “A Closer Look”.
Micron Technology has created an industry group to collaborate on the implementation of an open interface specification for a new memory technology called the Hybrid Memory Cube (HMC).
The Micron HMC
The design of HMC involved many Micron engineering teams including DRAM design, logic layer design, packaging, assembly, process R & D and test.
A standard DRAM building block can be combined with various versions of application specific logic. Each 1 Gb DRAM layer is optimized for concurrency and high bandwidth. The HMC device uses TSV technology and fine pitch copper pillar interconnect. DRAM logic is off- loaded to a high performance logic die. The logic die, with high performance transistors, is responsible for DRAM sequencing, refresh, data routing, error correction and high speed interconnect to the host. The use of TSVs enable thousands of connections in the Z direction. The stacking of many, dense DRAMs produces a very high density footprint. The HMC was constructed with 1866 TSVs on a roughly 60 u pitch.
The HMC DRAM is a 68 sq mm 50 nm 1Gb die segmented into multiple autonomous partitions. This structure allows greater than 16 concurrent operations per stack. The DRAM is optimized for random transactions typical of multi-core processors.
HMC electrical performance is are compared to other DRAM modules below.
Power and Bandwidth Comparison
Jeddeloh looks to the future and sees DRAM process geometry and cell size shrinking to half the size it is today. This and improved stacking will allow greater density for a given cube bandwidth and area. He predicts that HMC devices will extend beyond 8GB. The number of TSV connections will double to create a cube capable of 320 GB/s and beyond.
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