To download the latest issue
Mar 7th, 2013
Hybrid SiC Schottky rectifier/Si IGBT modules from GeneSiC enables 175*C operation
Low Inductance, higher temperature capability of Co-packaged mini-modules pushes IGBTs into new applications.
GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors announces the immediate availability of its second generation hybrid mini-modules using 1200 V/100 Amperes SiC Schottky Rectifiers with rugged Silicon IGBTs – the GB100XCP12-227. The performance-price point at which this product is being released allows many power conversion applications to benefit from the reduction of the cost/size/weight/volume that neither Silicon IGBT/ Silicon Rectifier solution, nor a pure SiC Module can offer. These devices are targeted for use in a wide variety of applications including industrial motors, solar inverters, specialized equipment and power grid applications.
"We listened to our key customers since the initial offering of this product almost 2 years back. This second generation 1200 V/100 A Co-pack product has a low inductance design that is suitable for high frequency, high temperature applications. The poor high temperature and reverse recovery characteristics of Silicon diodes critically limits the use of IGBTs at higher temperatures. GeneSiC’s low VF, low capacitance SiC Schottky Diodes enable this breakthrough product " said Dr. Ranbir Singh, President of GeneSiC Semiconductor.
All devices are 100% tested to full voltage/current ratings and housed in Halogen-Free, RoHS compliant industry-standard SOT-227 packages. The devices are immediately available from GeneSiC’s Authorized Distributors.
More COMPOUND SEMI news