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Apr 1st, 2014
New IGBT From STMicro boasts 40% lower energy losses
The new HB series of Insulated-Gate Bipolar Transistors (IGBTs) from STMicroelectronics have up to 40% lower turn-off energy losses than competing high-frequency devices, while reducing conduction losses by up to 30% says the company.
Leveraging ST’s advanced Trench-Gate Field-Stop High-Speed technology, the HB series has a minimal collector-current turn-off tail as well as very low saturation voltage (Vce(sat)) down to 1.6V (typical), hence minimizing energy losses during switching and when turned on. In addition, the technology is well controlled, producing a tight distribution window of parameters, enhancing repeatability and simplifying system design.
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