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Feb 5th, 2014
 
IQE announces industry’s first 150mm indium antimonide (InSb)
 
The leading global supplier of advanced semiconductor wafer products and services to the semiconductor industry, this week presents a series of invited papers on recent key developments in advanced photonic technologies at the world’s premier optoelectronics event, Photonics West.
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One of the papers announces an industry first; the commercial growth and characterization of 6” diameter InSb substrates that are suitable for use in the fabrication of MWIR focal plane infrared detectors:

Growth and characterization of 6" InSb substrates for use in large area infrared imaging applications
In addition to the 150mm InSb announcement, IQE will establish a strong presence at Photonics West with the presentation of a further two invited papers by the Group’s infrared division:

GaSb-based photodetectors covering short-wave to long-wave IR grown by molecular beam epitaxy
Molecular beam epitaxial (MBE) growth of GaSb-based photodetector structures spanning the short-wave to long wave IR spectral range. Barrier-type nBn detectors, grown on 4-inch GaSb or 6-inch GaAs.

Multi-wafer growth of GaInAs photodetectors on 4" InP by MOCVD for SWIR imaging applications
Growth of InP/GaInAs photodetectors on 4” InP by MOCVD.

Photonics West runs from 3 to 6 February at the Moscone Convention Center in San Francisco and is expected to attract around 1,200 exhibitors and 19,000 visitors

 

 
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