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Nov 14th, 2012
 
IR’s Gen8 1200V IGBT technology platform is out
 
The Generation 8 (Gen8) 1200V IGBT platform utilizes IR’s latest generation trench gate field stop technology to offer best-in-class performance for industrial and energy saving applications.
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International Rectifier, IR®, a world leader in power management technology, today introduced a new generation Insulated Gate Bipolar Transistor (IGBT) technology platform. The Generation 8 (Gen8) 1200V IGBT platform utilizes IR’s latest generation trench gate field stop technology to offer best-in-class performance for industrial and energy saving applications.

The novel Gen8 design allows best-in-class Vce(on) to reduce power dissipation and increase power density, and delivers superior robustness.

“With the development of this new benchmark technology and state-of-the-art IGBT silicon platform, IR underlines its decades of commitment to the advancement of power electronics technology. Our goal is to achieve 100 percent inverterization of all electric motors for a more efficient use of electric energy and a greener environment,” said Alberto Guerra, Vice President Strategic Marketing, Energy Saving Products Business Unit.

The new technology offers softer turn-off characteristics ideal for motor drive applications, minimizing dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. A narrow distribution of parameters offers excellent current sharing when paralleling multiple IGBTs in high-current power modules. The thin wafer technology delivers improved thermal resistance and maximum junction temperature up to 175°C.

“IR’s Gen8 IGBT platform offers a superior technology targeting industrial applications. With best-in-class Vce(on), robustness and excellent switching characteristics, this IGBT platform has been specifically tailored to achieve the demanding challenges of the industrial market,” said Llewellyn Vaughan-Edmunds, IGBT Product Marketing Manager, IR’s Energy Saving Products Business Unit.

Specifications

 

IR Part Number VCES IC (NOM) VCE(ON) (typ) Package
IRG8CH15K10F 1200V 10A 1.7 Die on Film
IRG8CH20K10F 15A
IRG8CH29K10F 25A
IRG8CH38K10F 35A
IRG8CH42K10F 40A
IRG8CH50K10F 50A
IRG8CH76K10F 75A
IRG8CH97K10F 100A
IRG8CH137K10F 150A
IRG8CH182K10F 200A

Availability
IR’s Gen8 1200V IGBT platform is being sampled to major OEM and ODM partners at this time.

 

 
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