International Rectifier, IR®, a world leader in power management technology, today announced the expansion of its portfolio of 600 V Trench Insulated Gate Bipolar Transistors (IGBTs) with the introduction of the IRGP4067DPbF and IRGP4066DPbF devices for uninterruptible power supplies (UPS), solar, industrial motor and welding applications.

The IRGP4067DPbF and IRGP4066DPbF utilize Trench thin wafer technology to offer lower conduction and switching losses. Co-packaged with a soft recovery low Qrr diode, the new devices are optimized for ultra-fast switching (8KHz-30KHz) with 5us short circuit rating and feature low Vce(on) and positive Vce(on) temperature coefficient for easy paralleling.

“These new 600 V IGBTs are suitable for a wide range of switching frequencies due to their low Vce(on) and low switching losses while offering higher system efficiency and rugged transient performance for increased reliability,” said Llewellyn Vaughan-Edmunds, IGBT product marketing manager, IR’s Energy Saving Products Business Unit.

Offered as both die and packaged devices, and available with or without short-circuit rating, other key features of the new devices include maximum junction temperature of 175 °C and low EMI for improved reliability.

Specifications

 

Part Number	Package	BV	Ic(100°C)	Vceon	Rth(j-c)	Type
IRGPS4067D	Super TO-247	600	120	1.9	0.20°C/W	Ultrafast
IRGP4066D	TO-247	600	75	1.9	0.33°C/W	Ultrafast

Availability and Pricing
Pricing begins at US $5.58 and US $4.80 each in 10,000-unit quantities for the IRGPS4067D and IRGP4066DPbF respectively. Production quantities are available immediately. Prices are subject to change.