International Rectifier (IR)® announced the expansion of its portfolio of HEXFET® power MOSFETs to offer a complete family of mid-voltage devices available in a 5 x 6mm PQFN package with optimized copper clip and solder die.

The new power MOSFETs, featuring IR’s latest silicon technology to deliver what is described as benchmark performance are designed for switching applications including dc-dc converters for network and telecom equipment, ac-dc Switch Mode Power Supplies (SMPS), and motor drive switches. Available in a wide range of voltages from 40 to 250V, the devices provide various levels of on-state resistance (RDS(on)) and gate charge (Qg) to offer customers optimized performance and cost for a given application.

"With a low 0.9mm profile and industry standard pin out, the devices’ high current rating and low RDS(on) enable higher efficiency, power density and reliability compared to alternative solutions requiring multiple parallel parts, making them well suited to switching applications where board space is limited "said Hemal Shah, Marketing Manager for IR’s Power Management Devices Business Unit.

All of the devices feature low thermal resistance (<0.5 C/W), are MSL1 industrial-qualified and RoHS compliant containing no lead, bromide or halogen.

Pricing for the IRFH5406TRPBF begins at US $0.54 each in 10,000-unit quantities. Production orders are available immediately.