webleads-tracker

Home  >  ADVANCED PACKAGING  > At ISSCC 2011, Samsung announced 1Gbit DRAM in a 3D TSV pac...
  >  ADVANCED PACKAGING
Feb 23rd, 2011
 
At ISSCC 2011, Samsung announced 1Gbit DRAM in a 3D TSV package
 
At the 2011 International Solid-State Circuits Conference (ISSCC), Oh-Hyun Kwon, president of Samsung Electronics Co. Ltd.’s semiconductor business, outlined Samsung vision for TSV.
Send to a friend

Bringing 3-D devices based on through-silicon via (TSV) is taking longer than expected. But at ISSCC, Samsung announced the development of a 1-Gbit DRAM with a 512-pin wide I/O interface intended for mobile applications such as smartphones and tablet computers. The chip is implemented in a manufacturing process technology somewhere between 50- and 59-nm. It will be reportedly housed in a 3-D package, based on TSV technology. Shipments are targeted for 2013. ''The wide I/O memory interface enabled by TSV technology offers considerable power reduction (up to 75 percent) by reducing the load capacitance of interconnect and I/O circuits,’’ Kwon said.

 

 
More ADVANCED PACKAGING news

Jul 23rd
Jul 22nd
Jul 21st
Jul 16th
Jul 12th
 
©2007 Yole Developpement All rights reserved                  Disclaimer | Legal notice | To advertise
Yole Développement: Le Quartz, 75 cours Emile Zola, 69100 Villeurbanne, France. TEL: (33) 472 83 01 80 FAX: (33) 472 83 01 83 E-Mail: info @yole.fr