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Feb 23rd, 2011
At ISSCC 2011, Samsung announced 1Gbit DRAM in a 3D TSV package
At the 2011 International Solid-State Circuits Conference (ISSCC), Oh-Hyun Kwon, president of Samsung Electronics Co. Ltd.’s semiconductor business, outlined Samsung vision for TSV.
Bringing 3-D devices based on through-silicon via (TSV) is taking longer than expected. But at ISSCC, Samsung announced the development of a 1-Gbit DRAM with a 512-pin wide I/O interface intended for mobile applications such as smartphones and tablet computers. The chip is implemented in a manufacturing process technology somewhere between 50- and 59-nm. It will be reportedly housed in a 3-D package, based on TSV technology. Shipments are targeted for 2013. ''The wide I/O memory interface enabled by TSV technology offers considerable power reduction (up to 75 percent) by reducing the load capacitance of interconnect and I/O circuits,’’ Kwon said.
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