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Aug 28th, 2013
IXYS introduces high-power SiC diode modules for 600V and 1200V applications
IXYS announced the introduction of the SS150 and SS275 series high-power Silicon Carbide (SiC) diodes by its IXYS Colorado division.
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Three diode configurations provide designers with flexible connection and layout options. Packaged in our low inductance, surface mount DE series package, these products provide excellent switching performance. The SS150 and SS275 are both available in 600V, 10A and 1200V, 5A ratings.

Standard internal configurations include: TI — Triple Independent — no common connections; TA — Triple Anode — anodes are tied together; and TC — Triple Cathode — cathodes are tied together. The SS150 and SS275 high-power SiC diode modules are designed for applications such as MHz switch-mode power supplies, high-frequency converters, resonant converters, rectifier circuits, and so on.

The use of SiC allows extremely fast switching, high frequency operation, with zero recovery and temperature independent behavior. Coupled with our low inductance RF package, these diodes can be utilized in any number of fast switching diode circuits or high frequency converter applications.

The SS150 and SS275 feature: surface-mount packages, 600V, 10A and 1200V, 5A power-handling capabilities, zero reverse recovery, zero forward recovery, high-frequency operation, temperature -independent behavior, low inductance, and a positive temperature coefficient for Vf. “The SS150 and SS275 high-power SiC diode modules allow designers more flexible design options with high frequency applications,” commented Stephen Krausse, General Manager of IXYS Colorado.



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