To download the latest issue
Apr 3rd, 2014
IXYS integrated circuits division offers new dual IGBT gate driver – The IX2204 is also well suited for driving SiC MOSFETs
IXYS Integrated Circuits Division (ICD), (NASDAQ: IXYS), announced the availability of the IX2204 Dual IGBT Gate Driver.
The IX2204 features two high current outputs, each capable of sourcing 2A and sinking 4A. Manufactured on IXYS ICD's advanced BCDMOS Silicon on Insulator (SOI) process, the IX2204 outputs have a wide operation voltage range of -10V to +26V. The negative gate drive capability can be used to insure the turn-off of high power IGBTs. The outputs can be paralleled for IGBT gates that require higher drive current. The IX2204 is extremely robust and virtually immune to the voltage transients that are common in high power applications.
A desaturation detection circuit protects the power IGBT during an over-current or short-circuit condition. If desaturation is detected, the IX2204 turns off the power IGBT in a controlled two-level manner that prevents excessive di/dt induced voltage transients. Under-voltage lockout (UVLO) circuitry protects the IGBT from insufficient gate voltage. A FAULT output signals a desaturation or UVLO event.
More POWER ELECTRONICS news