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Jul 4th, 2013
IXYS releases 4500V MOSFETs with DCB substrate package technology
IXYS Corporation announced the release of the highest-voltage Power MOSFET product line in the industry; 4500V N-Channel Power MOSFETs in international standard size packages.
The current ratings range from 200mA to 2A. They are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. As a result of the positive temperature coefficient of their on-state resistance, these very high voltage MOSFETs are suited for parallel device operation, which provides cost-effective solutions compared to series-connected, lower-voltage MOSFET ones. This also results in reduction in the associated gate drive circuitry, further simplifying the design, saving PCB board space, and improving the reliability of the overall system.
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