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Nov 17th, 2010
Industry’s coolest 100W GaN HEMT is now production ready…
Nitronex’s new generation power transistor achieves industry-leading thermal performance.
Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the
The NPT1010 is the second product designed on this new platform. With a thermal resistance of 1.4°C/W, the NPT1010 has the lowest thermal resistance of all GaN products at this power level in the marketplace. Normalized to power, the thermal resistance of the NPT1010 is lower than the competing 28V products by 30%. The device achieves over 60W, more than 55% drain efficiency and over 14dB power gain in a 500-1000MHz broadband application circuit with less than 80°C rise in junction temperature.
“We focused our efforts on reducing thermal rise and developed a complete plan to attack all the key factors: FET design, die thickness, die attach methods and package materials. We recognized early on that the contribution of the substrate is secondary to the contribution of other factors, particularly the FET design”, said Ray Crampton, VP of Engineering at Nitronex. “By combining improvements from several areas, we achieved a 22% improvement in thermals compared to our last generation products”.
The NPT1010 is available in a ceramic air cavity package in bolt-down and pill (solder) versions. It is lead-free and RoHS compliant, is production ready, and is available from stock to 10 weeks lead time through Nitronex’s standard sales channels.
For more information about Nitronex’s 100W NPT1010 and other power transistors, visit www.nitronex.com, e-mail email@example.com, or call 919-807-9100.
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