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Sep 28th, 2012
Infineon introduces 5th Generation thinQ!™ SiC Schottky barrier diodes delivering market leading efficiency at attractive price-performance ratio
Infineon today announces the expansion of its SiC (Silicon Carbide) portfolio with the introduction of the 650V thinQ! ™ SiC Schottky Barrier Diodes Generation 5.
Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as latest advancements in thin wafer technology bringing improved thermal characteristics and a Figure of Merit (Q c x V f) in the order of 30% lower with respect to the preceding Infineon SiC diode families. The result is a series of products delivering improved efficiency in PFC and Boost stages over all load conditions with respect to all previous thinQ! ™ generations. The Generation 5 products are targeted for use in high-end Server and Telecom SMPS (Switched-Mode Power Supply), PC Silverbox and Lighting applications, Solar Inverters and UPS (Uninterruptible Power Supply) systems. With the new generation, these applications not only benefit from improved efficiency, but also from reduced EMI (Electromagnetic Interference), increased system reliability and cost/size savings due to reduced cooling requirements.
650V SiC thinQ! Generation 5 diodes improve efficiency and solution costs.
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