Infineon’s 650V CoolMOS in D²PAK.

Infineon Technologies expands its Automotive power semiconductor lineup with the new 650V CoolMOS™ CFDA. This is the industry’s first Superjunction MOSFET solution with Integrated Fast Body Diode to meet the highest Automotive qualification standard AEC-Q101. The 650V CoolMOS™ CFDA is particularly designed for resonant topologies such as battery charging, DC/DC converters and HID (High Intensity Discharge) Lighting, also in hybrid and electric vehicles.

Infineon’s new solution combines all benefits of fast switching Superjunction MOSFETs: a better light load efficiency, reduced gate charge, lower switching losses, easy implementation as well as an outstanding reliability. Infineon offers a superior solution to the demand for higher energy efficiency of automotive applications: the new 650V CoolMOS™ CFDA provides lower area specific on-resistance while offering easy control of switching behavior as well as the highest body diode ruggedness in the market. Lower value of Q rr and Q oss at repetitive commutation on body diode reduces switching losses and turn on/off delay times.

“With the revolutionary CoolMOS™ technology Infineon has become the market leader in energy efficiency and power density,” says Jan-Willem Reynaerts, Product Segment Head of High Voltage Power Conversion at Infineon Technologies. “The 650V CoolMOS™ CFDA complements the CoolMOS™ CFD product family and sets new performance standards in the rapidly progressing electrification of cars.”

Good controllability of rapid current and voltage transients and softer commutation behavior that results in reduced EMI (Electromagnetic Interference) appearance, gives the new series a clear advantage in comparison with competitor parts. Limited voltage overshoot during hard commutation of the body diode enables easier implementation of layout and design. CoolMOS™ CFDA provides 650V breakdown voltage, which means an increased safety margin compared to 600V.