|
||||||||||||||||||||||||||
|
|
Home
> COMPOUND SEMI
> MATERIALS & EQUIPMENT
> Kyma wins $2.8m DoD funding for low-defect GaN development...
> COMPOUND SEMI MATERIALS & EQUIPMENT
Feb 8th, 2010
Kyma wins $2.8m DoD funding for low-defect GaN development
Kyma Technologies Inc of Raleigh, NC, USA, which provides crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials and related products and services, is to receive $2.8m from the US Department of Defense (DoD) for the continued development of low-defect-density GaN materials for high-performance electronic device applications.
This funding (included in the Fiscal Year 2010 Department of Defense Appropriations Bill) will support Kyma's ongoing efforts to make bigger and more cost-effective bulk GaN substrates, which are needed for multiple next-generation defense systems as well as several major commercial applications. Sources :
More COMPOUND SEMI MATERIALS & EQUIPMENT news Feb 28th
Feb 8th
Feb 4th
Feb 3rd
Feb 3rd
|
|||||||||||||||||||||||||
©2007 Yole Developpement All rights reserved Disclaimer | Legal notice | To advertise
Yole Développement: 45 rue Sainte Geneviève, F-69006 Lyon, France. TEL: (33) 472 83 01 80 FAX: (33) 472 83 01 83 E-Mail: info @yole.fr |
||||||||||||||||||||||||||