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> Kyma wins $2.8m DoD funding for low-defect GaN development...
> COMPOUND SEMI MATERIALS & EQUIPMENT
Feb 8th, 2010
Kyma wins $2.8m DoD funding for low-defect GaN development
Kyma Technologies Inc of Raleigh, NC, USA, which provides crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials and related products and services, is to receive $2.8m from the US Department of Defense (DoD) for the continued development of low-defect-density GaN materials for high-performance electronic device applications.
This funding (included in the Fiscal Year 2010 Department of Defense Appropriations Bill) will support Kyma's ongoing efforts to make bigger and more cost-effective bulk GaN substrates, which are needed for multiple next-generation defense systems as well as several major commercial applications. Sources :
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