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Feb 7th, 2012
 
LG Siltron selects Veeco MOCVD for GaN-on-Silicon wafer production
 
Veeco Instruments Inc. announced that LG Siltron, a South Korean epi wafer manufacturer, recently selected the TurboDisc® K465i™ gallium nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) System for production of gallium nitride on silicon (GaN-on-Si) wafers for power electronics and LED devices.
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As traditional silicon-based power transistors approach their limits, materials such as GaN are gaining popularity to speed energy conversion at lower costs. A wide range of industries, including many in the green-tech space such as wind, solar, smart grid, and hybrid electric vehicles, are driving demand for energy-efficient GaN-based power electronics. GaN-on-Si may also offer an alternative approach to LED manufacturing.

Dr. Hee Bog Kang, General Manager of LG Siltron R&D, commented, “We are pleased to have chosen the TurboDisc K465i MOCVD System as our first GaN-on-Si production system. It offers unparalleled throughput advantages, and its TurboDisc technology provides superior uniformity and low particle count, which is critical for producing GaN-on-Si wafers. We appreciate the strong support we have received from Veeco, and look forward to this and future collaborations.”

William J. Miller, Ph.D., Veeco’s Executive Vice President, Process Equipment, commented, “We are gratified that LG Siltron has chosen the K465i, which provides low cost-of-ownership and best-in-class yields, and look forward to supporting LG Siltron as they ramp production. The market for GaN-on-Si power devices continues to grow, and the K465i offers many advantages, such as improved device performance, lower manufacturing costs and increased productivity.”

 

 
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