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Oct 7th, 2011
Low profile split dual Si/SiC hybrid IGBT modules featuring multiple circuit topologies available from Powerex
Combining the NFH-Series Powerex IGBT, still the industry’s fastest power IGBT, with a Zero Recovery® Schottky diode, Powerex is now offering split dual Si/SiC hybrid IGBT modules (QID1210005 and QID1210006) designed for use in high frequency applications: upwards of 30kHz for hard switching applications and 60 to 80 kHz for soft switching applications.
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Each module consists of two IGBT transistors, with each transistor having a reverse-connected Zero Recovery free-wheel silicon carbide Schottky diode. A 30% decrease in switching losses result from this innovative design. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

QID1210005 and QID1210006 boast a very low profile and can be easily reconfigured. In total, five different configurations are possible: independent; as a dual; in parallel; common collector; and common emitter.

Product Ratings and Characteristics:
Rated at 100A/1200V, the QID1210005 and QID1210006 feature:
• Low ESW (off)
• Aluminum nitride isolation
• Low internal inductance
• 2 individual switches per module
• Isolated baseplate for easy heat sinking
• Copper baseplate on QID1210005 and, for extended thermal cycle life, AlSiC baseplate on QID1210006

These hybrid modules can be used in applications, including:
• Energy saving power systems, such as fans, pumps and consumer appliances
• High frequency type power systems, such as UPS, high speed motor drives, induction heating, welder and robotics
• High temperature power systems, such as power electronics in electric vehicle and aviation systems.

Standard Powerex NFH gate drivers can be used with the split dual Si/SiC Hybrid IGBT modules.
For more information, contact Kelly Bandieramonte (kbandieramonte@pwrx.com).
*Zero Recovery is a registered trademark of Cree, Inc.



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