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Home  >  COMPOUND SEMI  > MACOM announces industry’s highest power GaN L-Band radar ...
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Aug 8th, 2014
 
MACOM announces industry’s highest power GaN L-Band radar transistor - 650 W peak power GaN on SiC transistor provides high gain, efficiency & ruggedness over 1.2-1.4 GHz
 
The MAGX-001214-650L00 is a gold-metalized pre-matched GaN on Silicon Carbide transistor that offers the highest peak power in the industry for a single-ended power transistor optimized for pulsed L-Band radar applications.
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The MAGX-001214-650L00 guarantees 650 W of peak power with a typical 19.5 dB of gain and 60% efficiency. The device also boasts very high breakdown voltages which allow customers reliable and stable operation at 50 V under more extreme load mismatch conditions. The device is assembled in a high performance ceramic flange package and has undergone MACOM’s rigorous qualification and reliability testing, which offers customers state of the art power with rugged performance that is ideally suited to demanding radar applications.

Operating between the 1200 MHz – 1400 MHz Frequency range, the MAGX-001214-650L00 is a highly robust transistor, boasting a mean time to failure (MTTF) of 5.3*106 hours. The table below outlines typical performance:

Samples of MAGX-001214-650L00 are available from stock. Final datasheets and additional product information can be obtained from the M/A-COM website.

 

 
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