Home  >  POWER ELECTRONICS  > Microsemi expands power module family to include standard ...
May 23rd, 2011
Microsemi expands power module family to include standard products using silicon carbide technology
Phase leg modules use silicon carbide (SiC) devices, deliver fast switching frequencies with reduced losses.
Send to a friend

Microsemi Corporation (Nasdaq:MSCC), a leading provider of semiconductor technology aimed at building a smart, secure, connected world, today announced it has expanded its line of standard power modules to include a product that uses silicon carbide (SiC) devices for all diode and normally-off junction field effect transistor (JFET) functionality. The company previously only offered custom all-SiC power modules, but now is one of the first to also offer them as standard, off-the-shelf products.

"SiC technology is becoming increasingly important for improving system power performance and density while reducing product size and cooling requirements," said Philippe Dupin, Director, Power Module Products, for Microsemi's Power Products Group. "We are now extending our line of all-SiC power modules beyond custom solutions to include standard products that reduce costs and time to market for our customers."

Microsemi's APTJC120AM13VCT1AG phase leg SiC power module provides customers with a higher-performance alternative to the company's extensive line of all-silicon solutions. It operates at considerably higher rated junction temperatures than solutions using silicon IGBT and MOSFET devices, with switching losses that are 10 percent lower than modules featuring silicon MOSFETs, and 40 percent lower than those that incorporate silicon IGBTs. The modules enable the development of welding converters, switched mode and uninterruptible power supplies, and motor control systems used in solar, automotive, military/aerospace, medical and other demanding applications.

Product Details
Microsemi's phase leg SiC power module features very low stray inductance, high integration levels and low junction-to-case thermal performance. It uses four 30 amp (A) diodes and eight 50 milliohm JFETs and is rated at 1200 volts (V) but has an on-state resistance, or RDS(on) of 13 milliohms. The power module is RoHS-compliant and housed in a low-profile, isolated package with direct mounting to a heatsink.

Pricing and Availability
The APTJC120AM13VCT1AG phase leg SiC power module is sampling now and volume production is scheduled to begin in the third quarter of 2011. Pricing is $739.31 per module in OEM quantities of 1,000.

About Microsemi
Microsemi Corporation (Nasdaq:MSCC) offers the industry's most comprehensive portfolio of semiconductor technology. Committed to solving the most critical system challenges, Microsemi's products include high-performance, high-reliability analog and RF devices, mixed signal integrated circuits, FPGAs and customizable SoCs, and complete subsystems. Microsemi serves leading system manufacturers around the world in the defense, security, aerospace, enterprise, commercial, and industrial markets. Learn more at http://www.microsemi.com.

Microsemi and the Microsemi logo are registered trademarks or trademarks of Microsemi Corporation and/or its affiliates. Third-party trademarks and service marks mentioned are the property of their respective owners.


Sep 16th
Sep 15th
Sep 11th
Sep 8th
Sep 8th
©2007 Yole Developpement All rights reserved                  Disclaimer | Legal notice | To advertise
Yole Développement: Le Quartz, 75 cours Emile Zola, 69100 Villeurbanne, France. TEL: (33) 472 83 01 80 FAX: (33) 472 83 01 83 E-Mail: info @yole.fr