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Oct 17th, 2013
 
Microsemi's new 650V silicon carbide Schottky solution improves system performance in high-power industrial applications
 
Microsemi corporation, a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, expanded its silicon carbide (SiC) Schottky product family with a new line of 650 volt (V) solutions.
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The new diodes are targeted at high-power industrial applications including solar inverters.

Wide bandgap semiconductors such as SiC feature the most advanced material that is being considered by many power electronics and systems designers in their new designs. SiC offers a number of benefits compared to silicon material including a higher breakdown field strength and higher thermal conductivity. These attributes allow designers to create products with better performance characteristics encompassing zero reverse recovery, temperature independent behavior, higher voltage capability and higher temperature operation to achieve new levels of performance, efficiency and reliability.

"Microsemi's SiC power semiconductors are ideal for power electronic designers looking to improve system efficiency," said James Kerr, senior product marketing manager for Microsemi's Power Products Group. "Silicon carbide is a game-changing technology for many of our customers. With in-house fabrication capabilities, a comprehensive portfolio of SiC solutions and a roadmap that includes several new SiC products, Microsemi is positioned to capitalize on this growing market opportunity."

Microsemi's new 650V SiC Schottky diode product portfolio includes:
APT10SCD65K (650V, 10A, TO-220 package)
APT10SCD65KCT (650V, 10A, common cathode TO-220 package)
APT20SCD65K (650V, 20A, TO-220 package)
APT30SCD65B (650V, 30A, TO-247 package)

These new solutions are also used in the company's power modules, which are used in aerospace, welding, battery charging and other high-power industrial applications.


 
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