|
|||||||||||||||||
|
Home
> COMPOUND SEMI
> RF ELECTRONICS
> Mimix Asia launches 2.7 to 3.8 GHz GaAs MMIC 14W Power Ampl...
> COMPOUND SEMI RF ELECTRONICS
Jan 20th, 2010
Mimix Asia launches 2.7 to 3.8 GHz GaAs MMIC 14W Power Amplifier
Mimix Asia, a supplier of monolithic microwave integrated circuits
(MMICs) for microwave and millimeter-wave applications, introduces a 2.7 to 3.8 GHz GaAs MMIC power amplifier that has 32 dB large signal gain and 41.5 dBm saturated output power.
Identified as XP5002- BD, this device includes on-chip gate bias circuitry and delivers 40% power added efficiency. The XP5002-BD is well suited for radar, satellite and commercial applications. "The XP5002-BD provides a fully matched, high gain power amplifier solution,” says Paul Beasly, Business Development Manager, Mimix Asia. “The integrated bias circuitry, internal matching and superior gain performance provide an exceptionally compact solution for S-band high power applications.” Sources :
More COMPOUND SEMI RF ELECTRONICS news Jan 29th
Jan 7th
Dec 9th
Nov 19th
Nov 17th
|
||||||||||||||||
©2007 Yole Developpement All rights reserved Disclaimer | Legal notice | To advertise
Yole Développement: 75 cours Emile Zola, 69100 Villeurbanne, France. TEL: (33) 472 83 01 80 FAX: (33) 472 83 01 83 E-Mail: info @yole.fr |
|||||||||||||||||