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Jul 10th, 2012
 
Mitsubishi Electric to begin shipment of SiC power modules
 
Silicon Carbide power module samples from Mitsubishi Electric will contribute to downsized and more efficient electronic equipment for industries, homes.
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SiC module for home appliances.
SiC module for home appliances.

Mitsubishi Electric Corporation announce that it will begin shipping samples of five kinds of power modules for home appliances and industrial equipment starting on July 31, 2012. The modules use silicon carbide (SiC), a next generation semiconductor material expected to significantly reduce power loss in diode and metal oxide semiconductor field effect transistor (MOSFET) chips.

Inverters are widely used in home appliances like air conditioners and refrigerators, as well as in industrial devices, to increase energy efficiency. While Mitsubishi Electric already offers a wide variety of low-loss power semiconductor modules for inverters, the SiC modules offer significant reductions in power loss and improvements in high speed switching, achieving even higher efficiency and downsizing.

Of the five new types of SiC power module samples, three types are for home appliances, while two are for industrial devices such as inverters and servos.

Summary of Sale


*1. DIPIPM: Dual-in-line package intelligent power module
*2. DIPPFC: Dual-in-line package power factor correction

 
Industrial hybrid SiC-IPM.
Industrial hybrid SiC-IPM.

Product Features
1. SiC power module for home electronics
1-1. Hybrid SiC DIPIPM
• A SiC Schottky Barrier Diode (SBD) is used for the diode.
• Power loss is reduced by about 12% compared to DIPIPM using silicon (Si).
• The shape, size and pin configuration are the same as those of the Super mini DIPIPM.
• Offers the same protection as the Super mini DIPIPM using Si.
 
1-2. Hybrid SiC DIPPFC
• A SiC-SBD is used for the diode and achieves a maximum of 30kHz high-frequency switching.
• High-frequency switching contributes to the downsizing of peripheral components such as reactors and heat-sinks.
• The installation of a power factor correction (PFC) and driving IC contributes to downsizing through reduction of the mounting surface area and simplified wire patterning.
• Offers package compatibility with the Super mini DIPIPM using Si.
 
1-3.Full SiC DIPPFC
• SiC-MOSFET is used for the transistor, while SiC-SBD is used for the diode.
• Power loss is reduced by about 45% compared to products using Si.
• The adoption of SiC achieves a maximum of 50kHz high-frequency switching.
• High-frequency switching contributes to the downsizing of peripheral components such as reactors and heat-sinks.
• The installation of a PFC and driving IC contributes to downsizing through the reduction of mounting surface area and simplified wire patterning.
• Offers package compatibility with the Super mini DIPIPM using Si.
 
2. SiC power module for general industry
2-1. Hybrid SiC-IPM
• SiC-SBD is used for the diode.
• Power loss is reduced by about 25% compared to its predecessor PM75CL1A120 of the IPM L1 series, and contributes to the downsizing and improved product efficiency.
• The shape, size and pin configuration are the same as those of its predecessor PM75CL1A120 of the IPM L1 series.
• Offers the same protection as its predecessor PM75CL1A120 of the IPM L1 series.
 
2-2. Full SiC-Module
• SiC-MOSFET is used for the transistor and SiC-SBD is used for the diode.
• Power loss is reduced by about 70% compared to its predecessor CM400DY-24NF of the IGBT module (used in a parallel configuration), and contributes to improved product efficiency.
• Significantly reduces the size of packages, while reducing the mounting area by about 60% compared to its predecessor CM400DY-24NF of the IGBT module (used in a parallel configuration), and contributes to downsizing and weight reduction.
• Adopts a low inductance package to fully utilize the superior performance of SiC.

Specifications


Environmental awareness The SiC products are compliant with the European Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment (RoHS).

Note: DIPIPM and DIPPFC are registered trademarks of Mitsubishi Electric.


 
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