For smaller, more efficient power converters in wind power-generation and photovoltaic systems.
Mitsubishi Electric latest 6th generation MPD IGBT module.
Mitsubishi Electric Corporation announced today its Sixth-generation Mega Power Dual (MPD) Series of three insulated-gate bipolar transistor (IGBT) modules. The modules, which are for use in power converters, mainly those in large-capacity photovoltaic (PV) and wind power-generation systems, also are suitable for high-power applications in large-capacity inverters and uninterruptible power supply (UPS) systems for industrial equipment. Shipments will begin May 31 through Mitsubishi Electric sales sites in the Americas, Europe, China and Korea.
The modules will be showcased at PCIM Europe 2012 in Nuremberg, Germany from May 8-10.
Power generation systems are increasingly shifting to natural energy sources, such as wind and solar power, as part of efforts to limit carbon dioxide (CO2) emissions attributed to global warming. The Sixth-generation MPD Series responds to the growing need for robust power-conversion equipment in newer, large-scale megawatt-class systems. The predecessor series Fifth-generation MPD was released in 2002.
1) Enables smaller, more efficient power-conversion equipment
- The new modules' sixth-generation carrier-stored trench-gate bipolar transistor (CSTBT) reduces collector-emitter saturation voltage by approximately 15 percent compared to fifth-generation IGBT modules (CM900DUC-24NF, CM1400DUC-24NF and CM1000DUC-34NF).
- Gate capacitance reduced by 30?50 percent.
- Maximum junction temperature raised by 25°C to 175°C.
2) Compatibility with previous IGBT models
- Shape, size and pin configuration are the same as those of fifth-generation IGBT modules.
- Isolation voltage raised by 14-60 percent to 4,000V.
The Sixth-generation MPD Series is compliant with the European Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment (RoHS).
Note: CSTBT is a registered trademark of Mitsubishi Electric.