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Jul 19th, 2012
Nanya demonstrated its 1st functional 3D stacked DDR3 SDRAM using TSV middle
Nanya Technology Corporation successfully demonstrated its first functional TSV (Through Silicon Via) 8Gbit DDR3 SDRAM QDP (Quad-Die Package) featuring 4-high stack chip. This prototype product was developed by Nanya’s advanced via-middle process technology.
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To enhance its competitiveness in consumer market, Nanya Technology began developing TSV 3D-IC technology in 2010, and has joint development project with ITRI (Industrial Technology Research Institute) which is funded by Taiwan's Ministry of Economic Affairs (MOEA). By significantly shortening the chip-to-chip conduction path from a few milli-meters (as normally seen in a wired bond package) to around 50 micro-meters, the performance of TSV stack chips is extraordinary when compared with the traditional wire-bonding counterpart.

Nanya’s TSV chips of the first batch readily reach the speed of DDR3-1600 and above with great margin. The preliminary integration yield in the pre-production TSV technology is also above the most aggressive forecast. Foreseeing the potential of TSV 3D-IC technology in mobile and high-speed applications; Nanya commits to optimize its momentum for the development of TSV-based DRAM products to enter volume production by year 2014.

Time for DDR4, Nanya Sampling its DDR4 SDRAM
As JEDEC (Joint Electron Devices Engineering Council) is finalizing the DDR4 SDRAM specifications, Nanya has worked closely with its major partners in the early validation projects by sampling Nanya’s 30nm 4Gb DDR4 for validation in the second quarter of 2012, and received testing feedback lately. Thereupon, the high-end DDR4 RDIMM/LRDIMM for server applications will be sampled for validation in the third quarter, and is expected to enter into small volume production in 2013.

Nanya’s DDR4 SDRAM, co-developed with Micron Technology, is running at 1.2 volts power supply, as versus to 1.5 volts for DDR3, and achieving high-speed data transfer rates ranging from 1866MHz to 3200MHz. The DDR4 SDRAM is designed for more power-efficient and faster than the current DDR3 memory to meet current market’s need. Furthermore, through Nanya's TSV technology development, the density of DDR4 LRDIMM will go up to 64GB and 128GB. Aiming at high-end server market, Nanya will provide a high value-added solution with higher performance while at low power consumption for its customers to meet the booming demand.



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