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Jul 6th, 2013
Plessey releases 350mW gaN on silicon LEDs
Plessey Semiconductors Ltd says that samples of 350mW GaN-on-Si LEDs are now available.
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The entry-level lighting products are manufactured on Plessey’s 6-inch MAGIC (Manufactured on GaN I/C) line at its Plymouth, England facility. The new LEDs are targeted at a variety of solid-state lighting and entertainment-type lighting products including accent lighting, wall washing, wall grazing, strip-lighting and pulse lighting applications.

The MAGIC LED product range is expanding in both light output and efficacy. The PLB010350 is our first high-current device, operating at anywhere from 350mA through to 2A in pulse applications. We have also been able to demonstrate the versatility and the potential of the Plessey GaN on silicon technology by constructing an LED with a relatively large die area.” said Barry Dennington, Plessey's chief operating officer.

This new 350mW product demonstrates the inherent flexibility we have for the manufacture of LEDs with a 6-inch GaN-on-silicon substrate in an integrated circuit manufacturing line,” he adds. “We are seeing continual improvements in output efficiencies in the lab, which means we will continue to launch new products in line with our product release plan.”

The use of Plessey’s MAGIC GaN line—which employs standard semiconductor manufacturing processing – provides yield entitlements of more than 95% and fast processing times, providing a significant cost advantage over standard LEDs of similar quality, reckons the firm.

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