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Apr 9th, 2013
 
Plessey releases its first GaN on silicon LEDs
 
Plessey announced that samples of its Gallium Nitride (GaN) on silicon LED products (p/n PLW111010) are available.
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These entry level products are the first LEDs manufactured on 6-inch GaN on silicon substrates to be commercially available anywhere in the world. Plessey is using its proprietary large diameter GaN on silicon process technology to manufacture the LEDs on its 6-inch MAGICTM (Manufactured on GaN I/C) line at its Plymouth, England facility. The use of Plessey’s MAGIC GaN line using standard semiconductor manufacturing processing provides yield entitlements of greater than 95% and fast processing times providing a significant cost advantage over sapphire and silicon carbide based solutions for LEDs of similar quality.


 
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