Plessey announced the availability of its next generation GaN-on-Silicon mid-power LEDs.
Plessey announced the availability of its next generation GaN-on-Silicon mid-power LEDs. The product family doubles the efficacy of Plessey’s first generation MAGIC™ (Manufactured on GaN-on-Si I/C) products released in February 2013. Using standard silicon semiconductor production techniques, Plessey is able to achieve high flux output LED products at substantially lower cost. The PLW114050 is the first in a family of entry level LED lighting products that will be released.
“We have made great strides forward in refining, productizing and improving our patented MAGIC™ technology,” said Dr. Keith Strickland, Plessey’s Chief Technology Officer. “We have a roadmap that puts MAGIC™ ahead of the efficacies achieved by sapphire-based LEDs and, thereby, sets a new milestone in terms of Lm/$ performance. By approaching efficacy parity, we are accelerating the widespread adoption of GaN-on-Si LED-based lighting products. Our MAGIC™ LED products have a cost advantage over comparable sapphire-based LEDs as we use 6-inch, high yield, standard, automated silicon manufacturing technology.”
Dr. Jose Lopez, Plessey’s Chief Commercial Officer, said, “Customers are delighted that a European company is committed to developing and manufacturing world class GaN-on-Si LEDs. The market currently has many suppliers of LEDs but the quality and reliability can be variable. Plessey is a trusted brand with a 50-year plus track record of manufacturing products to the highest standards. Our aim is to light the world with MAGIC™ LEDs.”
The PLW114050 product is available in a CCT range from 6500K to 2700K, with a Lambertian distribution in an industry standard 3020 package. With a drive current of 60mA, the PLW114050 has a typical forward voltage of 3.2V. A full datasheet is available on the Plessey website. Plessey also supply the blue LED PLB010050 in sawn-wafer die form. Additional package options will be made available.