webleads-tracker

Home  >  POWER ELECTRONICS  > Power MOSFETs continue their evolution: Silicon is still ac...
  >  POWER ELECTRONICS
Mar 26th, 2012
 
Power MOSFETs continue their evolution: Silicon is still active
 
New switching power transistors using wide-bandgap semiconductors, such as SiC (silicon carbide) and GaN (gallium nitride) on silicon, will likely continue to significantly increase power-conversion efficiency. However, silicon power MOSFETs currently dominate the market and will continue to do so for several more years.
Send to a friend

New switching power transistors using wide-bandgap semiconductors, such as SiC (silicon carbide) and GaN (gallium nitride) on silicon, will likely continue to significantly increase power-conversion efficiency. However, silicon power MOSFETs currently dominate the market and will continue to do so for several more years. The APEC (Applied Power Electronics Conference) is traditionally the biggest showcase for power-switching devices and a good venue for checking in on power MOSFET technology.


Power MOSFETs tend to break into segments aligned with their blocking-voltage (VB) range, with common segments being less than 40, less than 100, and less than 600V. The largest market segments for power MOSFETs are the consumer and server/laptop markets so the blocking voltage of less than 100V is typically the bellwether for MOSFET-performance trends.

In the past, developments in silicon power MOSFETs could ride on the coattails of digital-silicon processes. Like digital ICs, which benefited from the increase in transistor density that Moore’s Law predicted, the economies of scale meant that performance increased even as prices fell. Those halcyon days are over, though; silicon MOSFETs seem to be reaching the performance limits of silicon technology.

“The trend is to spend more and more to get less and less improvement in performance,” says Stéphane Ernoux, director of International Rectifier’s power-management-devices business unit. “By ‘spending more,’ I mean developing more complex silicon technology. A ripple effect of this [situation] is that, as the silicon gets better, the package becomes a limitation. If you look back five, 10, or 15 years ago, all the focus was on the silicon, and the contribution of the package to MOSFET performance was small, but the silicon is now so good [that power-MOSFET manufacturers] have to focus on package improvement.”

To read this article, follow this link…


 
More POWER ELECTRONICS news

Sep 16th
Sep 15th
Sep 11th
Sep 8th
Sep 8th
 
©2007 Yole Developpement All rights reserved                  Disclaimer | Legal notice | To advertise
Yole Développement: Le Quartz, 75 cours Emile Zola, 69100 Villeurbanne, France. TEL: (33) 472 83 01 80 FAX: (33) 472 83 01 83 E-Mail: info @yole.fr