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Jan 27th, 2012
Powerex released full SiC modules featuring multiple circuit topologies
Created with a low profile and multiple circuit topologies, including independent; dual; in parallel; common collector; and common emitter, two new Powerex split dual SiC MOSFET Modules (QJD1210010 and QJD1210011) are designed for use in high frequency applications.
Each module consists of two MOSFET Silicon Carbide transistors, with each transistor having a reverse-connected Zero Recovery® free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Powerex Full-SiC module
Product Ratings and Characteristics:
The QJD1210010 can be purchased at sample pricing at $3,055 each. The QJD1210011 can be purchased at sample pricing at $3,175 each.
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