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Oct 5th, 2010
RFMD ventures into GaAs foundry services
RF Micro Devices Inc. expands its foundry services portfolio to include Gallium Arsenide technology and will begin to provide a full suite of GaAs pseudomorphic high electron mobility transistor (pHEMT) technologies to customers.
Specifically, RFMD will offer three distinct GaAs pHEMT technologies maximised for high power, low noise and RF switching products. RFMD's 0.3µm pHEMT technology offers high power and is optimised for X-band phased array power amplifiers (PAs) and 8-16GHz wideband military electronic warfare jammers. RFMD's 0.25µm pHEMT technology offers low noise, medium power and high linearity and is made for applications requiring low noise front ends and transmitter MMICs. Finally, RFMD's 0.6µm pHEMT technology offers low noise and high linearity switching of RF signals and is designed for applications including wireless front ends and transmit/receive modules.
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