RF Micro Devices Inc. expands its foundry services portfolio to include Gallium Arsenide technology and will begin to provide a full suite of GaAs pseudomorphic high electron mobility transistor (pHEMT) technologies to customers.

Specifically, RFMD will offer three distinct GaAs pHEMT technologies maximised for high power, low noise and RF switching products. RFMD's 0.3µm pHEMT technology offers high power and is optimised for X-band phased array power amplifiers (PAs) and 8-16GHz wideband military electronic warfare jammers. RFMD's 0.25µm pHEMT technology offers low noise, medium power and high linearity and is made for applications requiring low noise front ends and transmitter MMICs. Finally, RFMD's 0.6µm pHEMT technology offers low noise and high linearity switching of RF signals and is designed for applications including wireless front ends and transmit/receive modules.

All of the process technologies are manufactured in RFMD's Newton Aycliffe, United Kingdom fab. Currently, RFMD provides foundry services customers access to two of RFMD's gallium nitride (GaN) process technologies from its Greensboro, NC wafer fab: GaN1, targeted at high power applications, and GaN2, targeted at high linearity applications. RFMD also offers an Integrated Passive Component (IPC) technology made to complement high power applications. RFMD's advanced GaAs pHEMT technologies are likewise complementary to the company's GaN technologies and other power semiconductor technologies for the design of multi-chip modules (MCMs).