ROHM Semiconductor announced the release of two new 1200V SiC (Silicon Carbide) MOSFETs, designated SCT2080KE and SCH2080KE, that are designed to deliver cost-effective, breakthrough performance.
Both are 80-milliohm (mΩ) devices, and the ROHM SCH2080KE is the industry's first SiC MOSFET co-packaged with a discrete anti-parallel SiC Schottky Barrier Diode (SBD). This discrete diode features forward voltage that is three times smaller than that of the body diode. The combination of excellent switching performance, low on resistance and high breakdown voltage make these devices from ROHM Semiconductor ideal replacements to silicon power MOSFETs and IGBTs in applications such as solar inverters, three-phase inverters, DC-DC converters, uninterruptible power supplies (UPS) and motor drives.
The ROHM SCT2080KE and SCH2080KE SiC MOSFETs offer significantly lower switching loss; as much as 90% lower than comparable silicon devices thanks to the absence of tail current and the fast recovery performance of the body diode. This allows power system designers to increase switching frequency to reduce size, cost and weight of passives. Furthermore, designers can use these benefits to achieve higher efficiency systems from the implementation of simplified, less expensive cooling systems such as moving from liquid or forced air thermal management to smaller and lighter passive air-cooled heat sinks. In addition, the 70-90 nanosecond turn-off and turn-on times featured with the ROHM SCT2080KE and SCH2080KE SiC MOSFETs permits switching frequency in the hundreds of kilohertz (kHz) range.
"At ROHM, our advanced device design ensures that both ROHM 1200V SiC MOSFETs have been optimized as cost-effective solutions for a broad range of power system applications, and the SCH2080KE is especially popular with customers because it allows them to save board space, simplify layout and reduce BOM costs compared to equivalent discrete products," said David Doan, senior product marketing manager at ROHM Semiconductor. "Importantly, ROHM's SiC MOSFETs are free from issues related to gate oxide breakdown, Vth stability and degradation of the body diode during reverse conduction, which makes them excellent solutions for all circuit topologies and in the most demanding applications."