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Jul 11th, 2012
Renesas Electronics 7th-Generation 650V and 1250V IGBT Series now available
7th-Generation IGBTs Offer Low Saturation Voltages of 1.6 V for the 650 V Series, and 1.8 V for the 1250 V series to minimize power losses
Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced 13 new products in its 7th-generation Insulated Gate Bipolar Transistor (IGBT) lineup with industry-leading high performance. The new IGBTs include the RJH/RJP65S series for 650 V and RJP1CS series for 1250 V. The new IGBTs are power semiconductor devices used in systems that convert DC into AC power, and are designed for applications that handle high voltages and large currents, such as power conditioners (power converters) for solar power generators and industrial motors. The 7th-generation technology, based on enhanced thin wafer process, sets a low losses trade-off between conduction, switching losses and robustness capability to withstand short circuit conditions. Compared to the previous 6th-generation technology, products series of 600V and 1200V, the 7th-generation portfolio has higher voltage rating 650V and 1250V to address low temperature performance requirements and overvoltage blocking capability.
Key Features of the new IGBTs:
The exclusive ultrathin wafer technology reduced the saturation voltage to 1.6 V (typical value) from the 1.8 V (typical value) of comparable earlier Renesas products for the 650 V versions and to 1.8 V from 2.1 V for the 1250 V versions, a drop of about 12 percent and 15 percent in each case. This reduces power loss and contributes to increased efficiency.
The high short circuit tolerance, essential in applications that handle large currents, has been improved from the 8 microseconds (µs) range of comparable earlier Renesas products to 10 µs or above by optimized cell structure technology. This ensures excellent reliability and robust performance in systems such as power conditioners for solar power inverters.
The reverse transfer capacitance (Cres) (Note 3) has been lowered by approximately 10 percent compared with earlier Renesas products by optimizing the surface structure of the device. This contributes to faster switching and makes it possible to build more efficient power converter circuits.
These improvements contribute to lower power loss and more stable operation in applications such as the three-phase inverter circuits widely used in large-current inverter blocks of solar power inverters or inverter-controlled motors for industrial use.
This is the most important index of the performance of an IGBT. It indicates the collector-emitter voltage drop when the device is conducting current. The lower the value, the smaller the conduction loss.
An index of an IGBT's ability to withstand destruction. It indicates the amount of time before the IGBT is destroyed by unlimited current flow due to a short circuit. Generally speaking, a high value is desirable for applications demanding large current handling and high reliability, such as motor drives.
A parameter indicating the intrinsic capacitance between the gate and collector of the IGBT. Generally speaking, a smaller value mean faster switching of the device is possible, resulting in reduced switching losses.
Refer to the separate sheet for the main specifications of the IGBT series.
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