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Mar 27th, 2014
 
Researchers at the University of Illinois at Urbana-Champaign improve performance of III-V nanowires on graphene
 
Researchers at the University of Illinois at Urbana-Champaign have achieved new levels of performance for seed-free and substrate-free arrays of nanowires from class of materials called III-V directly on graphene. These compound semiconductors hold particular promise for applications involving light, such as solar cells or lasers.
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  • Depending on the materials, nanowires can be used for functional electronics and optoelectronics applications

"Over the past two decades, research in the field of semiconductor nanowires has helped to reshape our understanding of atomic-scale crystal assembly and uncover novel physical phenomena at the nanometer scale," explained Xiuling Li, a professor of electrical and computer engineering at Illinois. In the March 20th issue of Advanced Materials, the researchers present the first report of a novel solar cell architecture based on dense arrays of coaxial p-n junction InGaAs nanowires on InAs stems grown directly on graphene without any metal catalysts or lithographic patterning.

“In this work, we have overcome the surprising structure (phase segregation) and successfully grown single phase InGaAs and demonstrated very promising solar cell performance," explained postdoctoral researcher Parsian Mohseni, first author of the study.

 
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