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Jun 26th, 2012
SINANO successfully developed a new GaN/Si high voltage high power HeMT
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), has successfully developed a normally off AlGaN/GaN/Si HEMT power switching device. The device shows good gate input swing of 15 Volt and high threshold voltage of 3.5 Volt, which has reached the international advance level. It is also the first time in China that the GaN/Si power switching device is reported.
Owing to the excellent material properties such as high electron mobility and high breakdown field, GaN-based semiconductors are well suited for next-generation power switching devices. It is expected that the power conversion systems using GaN power switches can achieve 3.5% to 7% efficiency improvement with volume shrinkage of about 35%. Recent progress in GaN epitaxial growth technology allowed the fabrication of GaN-on-Si wafers with high quality, low cost, and large wafer size of up to 6 inch. Based on the GaN-on-Si technology platform, field-effect transistors (FETs) can be produced in large volume. Many world famous power devices manufacturers such as, IR, Infineon, Fairchild, Samsung are focusing on development of GaN/Si power switches. According to Yole Développement’s analysis, the market of GaN power devices will reaches 0.35 billion USD in 2015, then increase sharply in the following several years. In next decade, GaN power device will become a strong competitor to traditional Si power device, and share discrete power devices market of ten billion USD per year currently.
Fig 1: AlGaN/GaN/Si power switching device.
Fig 2: Optical photo of device chip.
Fig 3: Output characteristics of AlGaN/GaN/Si HEMT power switches.
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