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Aug 23rd, 2011
Samsung develops 32GB RDIMM using 3D TSV technology
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced the development of 32 gigabyte (GB) double data rate-3 (DDR3) registered dual Inline memory modules (RDIMMs) that use three dimensional (3D) through silicon via (TSV) package technology.
Samsung’s advanced 30 nanometer (nm) class* technology leverages module performance and power features to deliver a substantially greener memory solution than the preceding 40nm-class based modules. Engineering samples have been released for evaluation.
“These 32GB RDIMMs fully support the high-density and high-performance requirements of next-generation high-capacity servers,” said Wanhoon Hong, executive vice president, memory sales & marketing, Device Solutions, Samsung Electronics. “We will keep providing memory solutions with higher performance and density, while enhancing shared value in the design of ever-greener server systems,” he added.
Samsung's 32-Gbyte RDIMM made by using a TSV (through silicon via) technology.
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