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> SemiSouth first to sample 650V 55 Milliohm SiC JFETs...
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May 21st, 2012
SemiSouth first to sample 650V 55 Milliohm SiC JFETs
Fast switching, high current handling, superior thermal properties.
SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) transistor technology for high-power, high-efficiency, harsh-environment power management and conversion applications, is leading the world once more. After first releasing commercial 1200 V trench JFETs in 2008 - which are currently being used in volume production by many manufacturers of UPS, hi-rel products, audio systems and solar inverters - today SemiSouth is delivering industry’s first 650 V silicon carbide JFET power transistors. The fast switching speeds, large current handling capability combined with the superior thermal properties of SiC makes these devices ideal candidates for power electronic applications. They employ vertical trench JFET structures, which allow for industry-leading on-resistance per unit area, as much as five to ten times lower than competing technologies. Sources :
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