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Oct 9th, 2012
Successful migration to GaN on Si at Epistar based on AZZURRO’s 150 mm technology
The companies jointly confirmed achieving GaN‐on‐Si based LEDs utilizing Epistar’s high‐brightness LED structures and AZZURRO’s patented technology for 150 mm GaN‐on‐Si.
The successful completion of the joined project confirmed the excellent performance that can be reached. In particular the two companies are very satisfied about the extremely short development time of only 16 weeks for transferring Epistar’s existing LED structures build on sapphire to the GaN‐on‐Si material system. This milestone takes GaN‐on‐Si one step further towards implementation in mass production. Sources :
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