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Jun 14th, 2012
TI details TSV integration in 28-nm CMOS
Texas Instruments Inc. Wednesday (June 13) detailed progress in integrating through-silicon-vias (TSVs) into the company's advanced 28-nm CMOS process with little or no impact on nearby transistors.
In a paper due to be presented at the 2012 Symposia on VLSI Technology and Circuits in Honolulu, Hawaii, TI researchers were set to show results indicating minimal effect on transistors within 4 microns of TSV placement. The paper that researchers were to present also describes the use of nanobeam diffraction to measure near-TSV silicon strain on fully processed wafers to study the net effect of stressors.
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