The milestone demonstrates the industry’s system integration trend to achieve increased bandwidth, higher performance and superior energy efficiency by mounting the DRAM directly on the logic chip as a substrate using the Wide I/O interface.

TSMC’s CoWoS technology provides the front-end manufacturing through chip on wafer bonding process before forming the final component. Along with Wide I/O mobile DRAM, the integrated chips provide optimized system performance and a smaller form factor with significantly improved die-to-die connectivity bandwidth.

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