To download the latest issue
Nov 19th, 2012
Toshiba’s 6th generation 600V IGBTs is available
These compact 15A, 20A, 30A and 50A devices with integrated diode suit motor drive, inverter and UPS designs.
Toshiba Electronics Europe (TEE) has announced a sixth generation IGBT technology that offers improved switching loss/conduction loss tradeoff for increased efficiency and improved performance. The new technology is the basis for a new family of compact 600V devices that will suit a variety of hard switching applications including motor drives, solar inverters and uninterruptible power supplies (UPS). Toshiba’s sixth generation IGBT technology combines a finer pattern design and a thinner ‘punch through’ wafer process than the previous generation, as well as a highly optimized vertical design. As a result, devices based around the new process are able to provide lower VCE(sat) conduction losses and reduced Eon and Eoff switching losses. New products featuring the sixth generation technology offer current ratings of 15A (GT15J341), 20A (GT20J341), 30A (GT30J341) and 50A (GT50J342). Each of the parts integrates both the IGBT and a fast reverse recovery diode connected between emitter and collector, in a single, compact package. All feature a typical VCE(sat) of 1.5V at the nominal current. The 15A and 20A parts are supplied in a isolated TO-220SIS package, while the 30A and 50A devices are available in a non-isolated TO-3P(N) (TO-247 equivalent) package.
More POWER ELECTRONICS news