Toshiba Electronics Europe (TEE) has announced a hybrid N-channel IEGT (Injection-Enhanced Gate Transistor) module that features an embedded silicon carbide (SiC) fast recovery diode (FRD).
The high-efficiency PMI (Plastic case Module IEGT) will help designers to save energy, space and weight in high-power switching, inverter and motor control applications.
Rated at 1700V and 1200A, the half-bridge MG1200V2YS71 is ideal for switching in industrial, rail traction, renewable energy and electricity transmission and distribution systems. The module incorporates two switches (IEGTs), each with its own embedded SiC diode.
Use of an SiC diode leads to a significant decrease in reverse recovery current and a corresponding decrease in turn-on loss. As a result the new PMI offers a reverse recovery loss up to 97% lower than a module with a conventional silicon diode. This improvement in efficiency has allowed Toshiba to realize a cooling system that is much smaller than its silicon-based predecessor. In addition, thanks to the size reduction of some motor control parts, overall equipment size could be reduced by as much as 40%.
The new module has an isolation rating of 6000VAC (rms for one minute) and will operate with junction temperatures from -40°C to 150°C. As well as size, weight and efficiency improvements, use of the PMI module in applications such as rail traction can also lead to improved ride quality and lower acoustic noise.