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May 8th, 2012
Toshiba announces next-generation Superjunction, deep trench process power MOSFETs
New process to be deployed in latest 600V MOSFETs delivers ultra-low Rdson reduced switching losses and lower tendency to ‘ringing’.
Toshiba Electronics Europe (TEE) has announced a new-generation of superjunction (SJ) technology for power MOSFETs. Products based on the DTMOS-IV technology will make ideal switching devices in switch mode power supplies, lighting ballasts and other power applications that demand a combination of high-speed operation, high-efficiency, and low EMI noise. Because SJ MOSFETs offer ultra-low on resistance below the silicon limit they allow device miniaturisation and PCB space saving without power loss penalties. As a result, Toshiba’s new DTMOS-IV process – which is being deployed in the company’s latest family of highspeed, high-efficiency 600V power MOSFETs - offers on resistance ratings that are up to 40% lower than first-generation DTMOS products for the same die size. This means that designers can now choose a 600V MOSFET in TO-220SIS package with an RDS(ON) of just 0.065Ω, or a similar device in a TO-3P(N) package with an RDS(ON) down to 0.04Ω.
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