Toshiba Corporation has announced sample availability of an 8-megapixel, 1.12 micrometer, back side illumination (BSI) CMOS image sensor integrating a color noise reduction (CNR) circuit.

The new 1.12 micrometer image sensor, "T4K35", integrates both BSI and CNR to achieve a signal to noise ratio (SNR) equal to Toshiba's existing 1.4 micrometer product. It supports chip and camera module miniaturization and will contribute to the achievement of slimmer smartphones and tablets.

Pixel miniaturization in 1.12 micrometer pixel image sensors has cut light sensitivity and SNR, resulting in poorer image quality. BSI technology alone improves sensitivity but still falls short of the required image quality. Leveraging its powers of innovation and technology expertise, Toshiba has developed a CMOS image sensor that integrates both BSI and CNR, directly addressing the key issues of low light sensitivity and SNR. The new CMOS image sensor provides an approximately 1.5 times higher SNR value[1] than a 1.12 micrometer pixel image sensor without CNR, allowing manufacturers to develop products that deliver high quality imagery, even in low light conditions.

^[1] Based upon Toshiba measurements.

Key Features
1. Integrated CNR circuit
2. Frame rate of 30fps

Applications
Cameras for smartphones and tablets
 
Main specifications
Part number                                         T4K35
Resolution                                            8-megapixels
Optical size                                           1/4 inch
Aspect size                                           4:3
Pixel size                                               1.12 micrometers
Frame rate (full)                                   30fps
Mass production schedule                July 2013