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> Transphorm 600V GaN HEMT passed JEDEC qualification...
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Sep 13th, 2012
Transphorm 600V GaN HEMT passed JEDEC qualification
600V Gallium Nitride(GaN) High Electron Mobility Transistors (HEMT) employs patented EZ-GaN technology; establishes vital milestone in development of GaN devices.
Transphorm Inc. today announced the JEDEC qualification of the company's TPH2006PS, GaN HEMT on SiC substrate, making it the industry's first qualified 600V HEMT device. The TPH2006PS, based on its patented, high-performance EZ-GaNTM technology, combines low switching and conduction losses resulting in reduced energy loss of up to 50% compared to conventional silicon-based power conversion designs, today. The TO-220-packaged device features RDS(on) of 150 mΩ, Qrr of 42 nC and high frequency switching capability that enables compact, lower cost systems. Sources :
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