The new SiHP22N60S (TO-220), SiHF22N60S (TO-220 FULLPAK), SiHG22N60S (TO-247), and SiHB22N60S (TO-263) combine their 600V rating with an ultra-low 0.190Ω maximum on-resistance at a 10V gate drive. This low RDS(on) translates into lower conduction losses that save energy in power factor correction (PFC) and pulsewidth modulation (PWM) applications in a wide range of electronic systems, including LCD TVs, PCs, servers, switch mode power supplies (SMPS), and telecom systems.

In addition to their low on resistance, the devices feature a low gate charge of 98 nC. Gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications, is a low 18.62Ω nC.

For reliable operation, the devices are 100% avalanche tested and feature high repetitive (EAR) avalanche energy capabilities. Peak current handling is 65A pulsed and 22A continuous. All four devices feature an effective output capacitance specification.

Compared to previous-generation 600-V power MOSFETs, the new devices offer improved transconductance and reverse recovery characteristics. The MOSFETs are compliant to RoHS Directive 2002/95/EC.

Samples of the new Super Junction FET MOSFETs are available now. Production quantities will be available in Q1 2010, with lead times of eight to 10 weeks for larger orders. Pricing starts at $3.00 for devices in the TO-220 and TO-220F package and $3.50 for devices in the TO-247 and TO-263 package.