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Compound Semiconductors

Cree is terminating plans to sell its power and radio-frequency division, dubbed Wolfspeed, to German semiconductor firm Infineon. The Durham LED maker said late Thursday that the companies were “unable to identify alternatives which would address the national security concerns of the Committee on Foreign Investment in the United States (CFIUS).” 

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The latest generation of ALLOS Semiconductors’ high crystal quality GaN-on-Si process achieves excellent isolation without doping. Applying this technology ALLOS recently concluded the development of customized epi structures with very low leakage for a power electronics customer. The epiwafer growth processes were established in this customer’s Aixtron G5 and Veeco K465i reactors.

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Production qualification of 650V AllGaN Power ICs enables a high-speed revolution in power electronics. Navitas Semiconductor announced the immediate availability of production qualified iDrive Gallium Nitride (GaN) Power ICs using the company’s proprietary AllGaN technology. The NV6131, NV6105 & NV6115 offer a high-efficiency 650V, 160mOhm power FET with increasing integration of digital and analog circuits, leading to ground breaking speed, energy efficiency, power density and reduced system cost.

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The past 30 years has witnessed the impressive progress of GaN-based technology in various fields. Today, commercial GaN-based devices are available for both optoelectronic and electronic applications.

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US LED company Cree says that the Committee on Foreign Investment in the United States (CFIUS) is unlikely to approve the agreed sale of its Wolfspeed Power and RF division (which includes the SiC substrate business for power and RF) to Infineon.

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CS International 2017 promises to be the biggest show to date featuring leaders of the world’s biggest chipmakers and the most promising start-ups. Conference programme manager & editor of Compound Semiconductor magazine Richard Stevenson notes: “At this two-day meeting one of the key issues up for debate will be the role for wide-bandgap materials in the power electronics sector.

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Upcoming Events


> CS International
(March 7 - March 8, Brussels, Belgium)

> International Wide Bandgap Materials (WBG) Power Electronics Applications Workshop - IWBGPEAW
(May 22 - May 23, Stockholm, Sweden)

Latest Reports

Presentation

Status of the Sapphire Industry
Discover the presentation held by Eric Virey during the Sapphire Forum, the 6th of September...
SiC, Sapphire, GaN… : what is the business evolution of the non-Silicon based semiconductor industry?
Discover the presentation held by Pierric Gueguen at Semicon West, in San Fransisco, USA, in...
GaN on Si HEMT vs SJ MOSFET: Technology and Cost Comparison of next generation 600/650V power Devices
Discover the presentation held by Elena Barbarini from System Plus Consulting on APEC 2016, ...

Access to all our presentations